Hot carrier dynamics critically impacts the performance of electronic, optoelectronic, photovoltaic, and plasmonic devices. Hot carriers lose energy over nanometer lengths and picosecond timescales and thus are challenging to study experimentally, whereas calculations of hot carrier dynamics are cumbersome and dominated by empirical approaches. In this work, we present ab initio calculations of hot electrons in gallium arsenide (GaAs) using density functional theory and many-body perturbation theory. Our computed electron–phonon relaxation times at the onset of the
Γ,
L, and
X valleys are in excellent agreement with ultrafast optical experiments and show that the ultrafast (tens of femtoseconds) hot electron decay times observed experimentally arise from electron–phonon scattering. This result is an important advance to resolve a controversy on hot electron cooling in GaAs. We further find that, contrary to common notions, all optical and acoustic modes contribute substantially to electron–phonon scattering, with a dominant contribution from transverse acoustic modes. This work provides definitive microscopic insight into hot electrons in GaAs and enables accurate ab initio computation of hot carriers in advanced materials.Hot carriers (HCs) generated by the absorption of light or injection at a contact are commonly found in many advanced technologies (
1–
9). In electronics, the operation of high-speed devices is controlled by HC dynamics, and HC injection is a key degradation mechanism in transistors (
10,
11). In solar cells and plasmonics, recent work has focused on extracting the kinetic energy of HCs before cooling (
7,
9), a process defined here as the energy loss of HCs, ultimately leading to thermal equilibrium with phonons. HC dynamics is also crucial to interpret time-resolved spectroscopy experiments used to study excited states in condensed matter (
12). This situation has sparked a renewed interest in HCs in a broad range of materials of technological relevance.Experimental characterization of HCs is challenging because of the subpicosecond timescale associated with the electron–phonon (
e-ph) and electron–electron (
e-
e) scattering processes regulating HC dynamics. For example, HCs can be studied using ultrafast spectroscopy, but microscopic interpretation of time-resolved spectra requires accurate theoretical models. However, modeling of HCs thus far has been dominated by empirical approaches, which do not provide atomistic details and use ad hoc parameters to fit experiments (
13,
14). Notwithstanding the pioneering role of these early studies, the availability of accurate ab initio computational methods based on density functional theory (DFT) (
15) and many-body perturbation theory (
16) enables studies of HCs with superior accuracy, broad applicability, and no need for fitting parameters.Hot electrons in gallium arsenide (GaAs) are of particular interest because of the high electron mobility and multivalley character of the conduction band. Electrons excited at energies greater than ∼0.5 eV above the conduction band minimum (CBM) can transfer from the
Γ to the
L and
X valleys, with energy minima at ∼0.25 and ∼0.45 eV above the CBM, respectively (
17). Such intervalley scattering processes play a crucial role in hot electron cooling and transport at high electric fields.Ample experimental data exist on hot electron transport and cooling in GaAs (
12,
18–
21). The interpretation of these experiments relies on Monte Carlo simulations using multiple parameters fit to experimental results. For example, Fischetti and Laux (
13) used two empirical deformation potentials to model electron scattering induced by optical and acoustic phonons. Additionally, Fischetti and Laux (
13) used simplified band structure and phonon dispersions. We note that, because multiple parameter sets can fit experimental results, the HC scattering rates due to different physical processes obtained empirically are not uniquely determined (
13,
14).Although heuristic approaches can provide some insight into HC dynamics of well-characterized materials (e.g., GaAs), there is a lack of generally applicable, predictive, and parameter-free approaches to study HCs.Here, we carry out ab initio calculations of hot electrons in GaAs with energies up to 5 eV above the CBM. Our ability to use extremely fine grids in the Brillouin zone (BZ) allows us to resolve hot electron scattering in the conduction band with unprecedented accuracy. We focus here on three main findings. First, our overall computed
e-ph scattering rates are in excellent agreement with those in previous semiempirical calculations in ref.
13 that combine multiple empirical parameters. The advantage of our approach is the ability to compute the electronic band and momentum dependence of the
e-ph scattering rates without fitting parameters. Second, we show that both optical and acoustic modes contribute substantially to
e-ph scattering, with a dominant scattering from transverse acoustic (TA) modes. This result challenges the tenet that HCs lose energy mainly through longitudinal optical (LO) phonon emission. Third, our calculations provide valuable means for quantitative interpretation of experiments of hot electron cooling in GaAs. In particular, the ultrafast (∼50 fs)
e-ph relaxation times that we compute at the onset of the
X valley are in excellent agreement with the fastest decay time observed in ultrafast optical experiments (
18,
19,
21). This signal was attributed by some (
18) to
e-
e scattering and by others (
21) to
e-ph scattering. The excellent agreement with time decay signals in time-resolved experiments shows the dominant role of
e-ph scattering for hot electron cooling at low carrier density.Our approach combines electronic band structures computed ab initio using the
GW (where
G is the Green function,
W is the screened Coulomb potential, and
GW is the diagram employed for the electron exchange-correlation interactions) method (
16) with phonon dispersions from density functional perturbation theory (DFPT) (
22), and it is entirely free of empirical parameters. We compute the
e-ph matrix elements using a Wannier function formalism (
23) on very fine BZ grids and are able to resolve
e-ph scattering for the different conduction band valleys. The
e-
e rates for hot electrons—also known as impact ionization (II) rates—are computed using the
GW method (
16,
24), and thus include dynamical screening effects. Additional details of our calculations are discussed in
Methods.
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